FP11W60C3 MOSFET Transistor

The FP11W60C3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FP11W60C3 transistor as follows.

FP11W60C3 Transistor Specification

Transistor Code		FP11W60C3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		ITO-3P
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	11A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.38Ohm
Power Dissipation (Maximum)	PD	45W
Drain-Source Capacitance		390pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		30nS
Gate-Threshold Voltage (Maximum)		3.9V
Total Gate Charge		45nC

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