FP10W90 MOSFET Transistor

The FP10W90 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FP10W90 transistor as follows.

FP10W90 Transistor Specification

Transistor Code		FP10W90
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		ITO-3P
Drain-Source Voltage (Maximum)	VDS	900V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.4Ohm
Power Dissipation (Maximum)	PD	70W
Drain-Source Capacitance		420pF
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		72nC

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