FMV21N50ES MOSFET Transistor

The FMV21N50ES is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FMV21N50ES transistor as follows.

FMV21N50ES Transistor Specification

Transistor Code		FMV21N50ES
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220F
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	21A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.27Ohm
Power Dissipation (Maximum)	PD	120W
Drain-Source Capacitance		320pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		33nS
Gate-Threshold Voltage (Maximum)		4.7V
Total Gate Charge		68nC

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