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FMV19N60E MOSFET Transistor

The FMV19N60E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FMV19N60E transistor as follows.

Circuit diagram symbol of the FMV19N60E transistor

FMV19N60E Transistor Specification

Transistor Code FMV19N60E
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220F
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 19A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.365Ohm
Power Dissipation (Maximum) PD 130W
Drain-Source Capacitance 310pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 13nS
Gate-Threshold Voltage (Maximum) 3.5V
Total Gate Charge 105nC

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