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FMV13N60ES MOSFET Transistor

The FMV13N60ES is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FMV13N60ES transistor as follows.

Circuit diagram symbol of the FMV13N60ES transistor

FMV13N60ES Transistor Specification

Transistor Code FMV13N60ES
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220F
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 13A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.58Ohm
Power Dissipation (Maximum) PD 80W
Drain-Source Capacitance 190pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 24nS
Gate-Threshold Voltage (Maximum) 4.7V
Total Gate Charge 48nC

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