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FMV10N80E MOSFET Transistor

The FMV10N80E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FMV10N80E transistor as follows.

Circuit diagram symbol of the FMV10N80E transistor

FMV10N80E Transistor Specification

Transistor Code FMV10N80E
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220F
Drain-Source Voltage (Maximum) VDS 800V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 10A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.1Ohm
Power Dissipation (Maximum) PD 85W
Drain-Source Capacitance 165pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 32nS
Gate-Threshold Voltage (Maximum) 4.5V
Total Gate Charge 50nC

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