FMR17N60ES MOSFET Transistor

The FMR17N60ES is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FMR17N60ES transistor as follows.

FMR17N60ES Transistor Specification

Transistor Code		FMR17N60ES
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-3PF
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	17A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.4Ohm
Power Dissipation (Maximum)	PD	135W
Drain-Source Capacitance		280pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		41nS
Gate-Threshold Voltage (Maximum)		4.7V
Total Gate Charge		68nC

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