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FMP12N50E MOSFET Transistor

The FMP12N50E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FMP12N50E transistor as follows.

Circuit diagram symbol of the FMP12N50E transistor

FMP12N50E Transistor Specification

Transistor Code FMP12N50E
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220AB
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 12A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.52Ohm
Power Dissipation (Maximum) PD 165W
Drain-Source Capacitance 160pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 9nS
Gate-Threshold Voltage (Maximum) 3.5V
Total Gate Charge 47nC

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