FMP11N60E MOSFET Transistor

The FMP11N60E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FMP11N60E transistor as follows.

FMP11N60E Transistor Specification

Transistor Code		FMP11N60E
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	11A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.75Ohm
Power Dissipation (Maximum)	PD	180W
Drain-Source Capacitance		150pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		9.5nS
Gate-Threshold Voltage (Maximum)		3.5V
Total Gate Charge		48.5nC

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