FMI80N10T2 MOSFET Transistor

The FMI80N10T2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FMI80N10T2 transistor as follows.

FMI80N10T2 Transistor Specification

Transistor Code		FMI80N10T2
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		T-PACK-L
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	80A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0128Ohm
Power Dissipation (Maximum)	PD	270W
Drain-Source Capacitance		740pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		44nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		120nC

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