FMI13N60ES MOSFET Transistor

The FMI13N60ES is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FMI13N60ES transistor as follows.

FMI13N60ES Transistor Specification

Transistor Code		FMI13N60ES
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		T-PACK-L
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	13A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.58Ohm
Power Dissipation (Maximum)	PD	225W
Drain-Source Capacitance		190pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		24nS
Gate-Threshold Voltage (Maximum)		4.7V
Total Gate Charge		48nC

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