FMI12N60ES MOSFET Transistor

The FMI12N60ES is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FMI12N60ES transistor as follows.

FMI12N60ES Transistor Specification

Transistor Code		FMI12N60ES
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		T-PACK-L
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	12A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.75Ohm
Power Dissipation (Maximum)	PD	180W
Drain-Source Capacitance		150pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		40nS
Gate-Threshold Voltage (Maximum)		4.7V
Total Gate Charge		37nC

UXPython is not the creator or an official representative of the FMI12N60ES MOSFET transistor. You can download the official FMI12N60ES MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

FMI11N60E MOSFET Transistor FMI07N50E MOSFET Transistor FMI16N60ES MOSFET Transistor FMI10N60E MOSFET Transistor FMI16N50E MOSFET Transistor FMI05N60E MOSFET Transistor FMI20N50ES MOSFET Transistor FMI03N60E MOSFET Transistor FMI16N50ES MOSFET Transistor FMI05N50E MOSFET Transistor FMI16N60E MOSFET Transistor FMI80N10T2 MOSFET Transistor FMI13N60ES MOSFET Transistor FMI20N50E MOSFET Transistor FMI12N50E MOSFET Transistor FMI06N60ES MOSFET Transistor FMI13N60E MOSFET Transistor FMI12N50ES MOSFET Transistor