FMI12N50ES MOSFET Transistor

The FMI12N50ES is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FMI12N50ES transistor as follows.

FMI12N50ES Transistor Specification

Transistor Code		FMI12N50ES
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		T-PACK-L
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	12A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.5Ohm
Power Dissipation (Maximum)	PD	180W
Drain-Source Capacitance		160pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		18nS
Gate-Threshold Voltage (Maximum)		4.2V
Total Gate Charge		43nC

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