FMI12N50E MOSFET Transistor

The FMI12N50E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FMI12N50E transistor as follows.

FMI12N50E Transistor Specification

Transistor Code		FMI12N50E
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		T-PACK-L
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	12A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.52Ohm
Power Dissipation (Maximum)	PD	165W
Drain-Source Capacitance		160pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		9nS
Gate-Threshold Voltage (Maximum)		3.5V
Total Gate Charge		47nC

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