FMI10N60E MOSFET Transistor

The FMI10N60E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FMI10N60E transistor as follows.

FMI10N60E Transistor Specification

Transistor Code		FMI10N60E
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		T-PACK-L
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.79Ohm
Power Dissipation (Maximum)	PD	165W
Drain-Source Capacitance		140pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		9nS
Gate-Threshold Voltage (Maximum)		3.5V
Total Gate Charge		47nC

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