FMI06N60ES MOSFET Transistor

The FMI06N60ES is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FMI06N60ES transistor as follows.

FMI06N60ES Transistor Specification

Transistor Code		FMI06N60ES
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		T-PACK-L
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.2Ohm
Power Dissipation (Maximum)	PD	105W
Drain-Source Capacitance		100pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		15nS
Gate-Threshold Voltage (Maximum)		4.2V
Total Gate Charge		31nC

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