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FMH21N50ES MOSFET Transistor

The FMH21N50ES is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FMH21N50ES transistor as follows.

Circuit diagram symbol of the FMH21N50ES transistor

FMH21N50ES Transistor Specification

Transistor Code FMH21N50ES
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-3P-Q
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 21A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.27Ohm
Power Dissipation (Maximum) PD 285W
Drain-Source Capacitance 320pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 33nS
Gate-Threshold Voltage (Maximum) 4.7V
Total Gate Charge 68nC

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