FMH20N50ES MOSFET Transistor

The FMH20N50ES is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FMH20N50ES transistor as follows.

FMH20N50ES Transistor Specification

Transistor Code		FMH20N50ES
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-3P-Q
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	20A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.31Ohm
Power Dissipation (Maximum)	PD	235W
Drain-Source Capacitance		250pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		38nS
Gate-Threshold Voltage (Maximum)		4.7V
Total Gate Charge		57nC

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