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FMC13N60E MOSFET Transistor

The FMC13N60E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FMC13N60E transistor as follows.

Circuit diagram symbol of the FMC13N60E transistor

FMC13N60E Transistor Specification

Transistor Code FMC13N60E
Transistor Type MOSFET
Control Channel Type N-Channel
Package T-PACK-S
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 13A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.58Ohm
Power Dissipation (Maximum) PD 225W
Drain-Source Capacitance 190pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 8nS
Gate-Threshold Voltage (Maximum) 3.5V
Total Gate Charge 60nC

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