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FMC12N60ES MOSFET Transistor

The FMC12N60ES is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FMC12N60ES transistor as follows.

Circuit diagram symbol of the FMC12N60ES transistor

FMC12N60ES Transistor Specification

Transistor Code FMC12N60ES
Transistor Type MOSFET
Control Channel Type N-Channel
Package T-PACK-S
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 12A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.75Ohm
Power Dissipation (Maximum) PD 180W
Drain-Source Capacitance 150pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 40nS
Gate-Threshold Voltage (Maximum) 4.7V
Total Gate Charge 37nC

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