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FLD470 MOSFET Transistor

The FLD470 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FLD470 transistor as follows.

Circuit diagram symbol of the FLD470 transistor

FLD470 Transistor Specification

Transistor Code FLD470
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220F
Drain-Source Voltage (Maximum) VDS 40V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 70A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.006Ohm
Power Dissipation (Maximum) PD 35W
Drain-Source Capacitance 1200pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 100nS

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