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FK10VS-9 MOSFET Transistor

The FK10VS-9 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FK10VS-9 transistor as follows.

Circuit diagram symbol of the FK10VS-9 transistor

FK10VS-9 Transistor Specification

Transistor Code FK10VS-9
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220S
Drain-Source Voltage (Maximum) VDS 450V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 10A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.92Ohm
Power Dissipation (Maximum) PD 125W
Drain-Source Capacitance 1100pF
Operating Junction Temperature (Maximum) 150°C

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