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FDZ294N MOSFET Transistor

The FDZ294N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDZ294N transistor as follows.

Circuit diagram symbol of the FDZ294N transistor

FDZ294N Transistor Specification

Transistor Code FDZ294N
Transistor Type MOSFET
Control Channel Type N-Channel
Package BGA
Transistor SMD Code E
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 6A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.023Ohm
Power Dissipation (Maximum) PD 1.7W
Drain-Source Capacitance 172pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 5nS
Gate-Threshold Voltage (Maximum) 1.5V

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