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FDZ291P MOSFET Transistor

The FDZ291P is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDZ291P transistor as follows.

Circuit diagram symbol of the FDZ291P transistor

FDZ291P Transistor Specification

Transistor Code FDZ291P
Transistor Type MOSFET
Control Channel Type P-Channel
Package BGA
Transistor SMD Code D
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 8V
Drain Current (Maximum) ID 4.6A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.04Ohm
Power Dissipation (Maximum) PD 1.7W
Drain-Source Capacitance 160pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 9nS
Gate-Threshold Voltage (Maximum) 1V

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