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FDZ209N MOSFET Transistor

The FDZ209N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDZ209N transistor as follows.

Circuit diagram symbol of the FDZ209N transistor

FDZ209N Transistor Specification

Transistor Code FDZ209N
Transistor Type MOSFET
Control Channel Type N-Channel
Package BGA
Transistor SMD Code 209N
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 4A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.08Ohm
Power Dissipation (Maximum) PD 2W
Drain-Source Capacitance 76pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 4nS
Gate-Threshold Voltage (Maximum) 3V

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