FDZ209N MOSFET Transistor

The FDZ209N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDZ209N transistor as follows.

FDZ209N Transistor Specification

Transistor Code		FDZ209N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		BGA
Transistor SMD Code		209N
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.08Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		76pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		4nS
Gate-Threshold Voltage (Maximum)		3V

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