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FDZ206P MOSFET Transistor

The FDZ206P is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDZ206P transistor as follows.

Circuit diagram symbol of the FDZ206P transistor

FDZ206P Transistor Specification

Transistor Code FDZ206P
Transistor Type MOSFET
Control Channel Type P-Channel
Package BGA16
Transistor SMD Code 206P
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 13A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0095Ohm
Power Dissipation (Maximum) PD 2.2W
Drain-Source Capacitance 873pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 11nS
Gate-Threshold Voltage (Maximum) 1.5V

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