FDZ201N MOSFET Transistor

The FDZ201N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDZ201N transistor as follows.

FDZ201N Transistor Specification

Transistor Code		FDZ201N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SSOT-6
Transistor SMD Code		201N
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.018Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		268pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		11nS
Gate-Threshold Voltage (Maximum)		1.5V

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