FDW256P MOSFET Transistor

The FDW256P is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDW256P transistor as follows.

FDW256P Transistor Specification

Transistor Code		FDW256P
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSSOP-8
Transistor SMD Code		256P
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0135Ohm
Power Dissipation (Maximum)	PD	1.3W
Drain-Source Capacitance		599pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		11nS
Gate-Threshold Voltage (Maximum)		3V

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