FDW252P MOSFET Transistor

The FDW252P is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDW252P transistor as follows.

FDW252P Transistor Specification

Transistor Code		FDW252P
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSSOP-8
Transistor SMD Code		252P
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	8.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0125Ohm
Power Dissipation (Maximum)	PD	1.3W
Drain-Source Capacitance		1035pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		14nS
Gate-Threshold Voltage (Maximum)		1.5V

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