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FDV305N MOSFET Transistor

The FDV305N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDV305N transistor as follows.

Circuit diagram symbol of the FDV305N transistor

FDV305N Transistor Specification

Transistor Code FDV305N
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT23_SUPERSOT3
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 0.9A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.22Ohm
Power Dissipation (Maximum) PD 0.35W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 1.5V

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