FDV302P MOSFET Transistor

The FDV302P is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDV302P transistor as follows.

FDV302P Transistor Specification

Transistor Code		FDV302P
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT23
Transistor SMD Code		302
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	0.12A
Drain-Source On-State Resistance (Maximum)	RDS(on)	10Ohm
Power Dissipation (Maximum)	PD	0.35W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		1.5V

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