FDU8870 MOSFET Transistor

The FDU8870 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDU8870 transistor as follows.

FDU8870 Transistor Specification

Transistor Code		FDU8870
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-251AA
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	160A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0039Ohm
Power Dissipation (Maximum)	PD	160W
Drain-Source Capacitance		990pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		83nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		118nC

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