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FDU8870 MOSFET Transistor

The FDU8870 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDU8870 transistor as follows.

Circuit diagram symbol of the FDU8870 transistor

FDU8870 Transistor Specification

Transistor Code FDU8870
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-251AA
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 160A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0039Ohm
Power Dissipation (Maximum) PD 160W
Drain-Source Capacitance 990pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 83nS
Gate-Threshold Voltage (Maximum) 2.5V
Total Gate Charge 118nC

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