FDU8782 MOSFET Transistor

The FDU8782 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDU8782 transistor as follows.

FDU8782 Transistor Specification

Transistor Code		FDU8782
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-251AA
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	35A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.011Ohm
Power Dissipation (Maximum)	PD	50W
Drain-Source Capacitance		230pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		9nS
Gate-Threshold Voltage (Maximum)		2.5V

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