FDU6N50F MOSFET Transistor

The FDU6N50F is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDU6N50F transistor as follows.

FDU6N50F Transistor Specification

Transistor Code		FDU6N50F
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		I-PAK
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	5.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.15Ohm
Power Dissipation (Maximum)	PD	89W
Drain-Source Capacitance		85pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		28.3nS
Gate-Threshold Voltage (Maximum)		5V

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