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FDU6N25 MOSFET Transistor

The FDU6N25 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDU6N25 transistor as follows.

Circuit diagram symbol of the FDU6N25 transistor

FDU6N25 Transistor Specification

Transistor Code FDU6N25
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO251_IPAK
Drain-Source Voltage (Maximum) VDS 250V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 4.4A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.1Ohm
Power Dissipation (Maximum) PD 50W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 5V

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