FDU6688 MOSFET Transistor

The FDU6688 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDU6688 transistor as follows.

FDU6688 Transistor Specification

Transistor Code		FDU6688
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-251AA
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	84A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.005Ohm
Power Dissipation (Maximum)	PD	83W
Drain-Source Capacitance		930pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		13nS
Gate-Threshold Voltage (Maximum)		3V

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