FDU6680 MOSFET Transistor

The FDU6680 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDU6680 transistor as follows.

FDU6680 Transistor Specification

Transistor Code		FDU6680
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-251AA
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	46A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.01Ohm
Power Dissipation (Maximum)	PD	56W
Drain-Source Capacitance		325pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		7nS
Gate-Threshold Voltage (Maximum)		3V

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