FDU6030BL MOSFET Transistor

The FDU6030BL is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDU6030BL transistor as follows.

FDU6030BL Transistor Specification

Transistor Code		FDU6030BL
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-251AA
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	42A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.016Ohm
Power Dissipation (Maximum)	PD	50W
Drain-Source Capacitance		249pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		10nS
Gate-Threshold Voltage (Maximum)		3V

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