FDS8960C MOSFET Transistor

The FDS8960C is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDS8960C transistor as follows.

FDS8960C Transistor Specification

Transistor Code		FDS8960C
Transistor Type		MOSFET
Control Channel Type		NP-Channel
Package		SO8
Drain-Source Voltage (Maximum)	VDS	35V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.024Ohm
Power Dissipation (Maximum)	PD	2W
Operating Junction Temperature (Maximum)		150°C

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