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FDS8949 MOSFET Transistor

The FDS8949 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDS8949 transistor as follows.

Circuit diagram symbol of the FDS8949 transistor

FDS8949 Transistor Specification

Transistor Code FDS8949
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOIC
Drain-Source Voltage (Maximum) VDS 40V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 6A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.029Ohm
Power Dissipation (Maximum) PD 2W
Operating Junction Temperature (Maximum) 150°C

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