FDS8935 MOSFET Transistor

The FDS8935 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDS8935 transistor as follows.

FDS8935 Transistor Specification

Transistor Code		FDS8935
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOIC
Drain-Source Voltage (Maximum)	VDS	80V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	2.1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.183Ohm
Power Dissipation (Maximum)	PD	3.1W
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		13nC

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