FDS8884 MOSFET Transistor

The FDS8884 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDS8884 transistor as follows.

FDS8884 Transistor Specification

Transistor Code		FDS8884
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOIC
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	8.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.023Ohm
Power Dissipation (Maximum)	PD	2.5W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		9.2nC

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