FDS86106 MOSFET Transistor

The FDS86106 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDS86106 transistor as follows.

FDS86106 Transistor Specification

Transistor Code		FDS86106
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOIC
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	3.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.105Ohm
Power Dissipation (Maximum)	PD	5W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		4V

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