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FDS7779Z MOSFET Transistor

The FDS7779Z is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDS7779Z transistor as follows.

Circuit diagram symbol of the FDS7779Z transistor

FDS7779Z Transistor Specification

Transistor Code FDS7779Z
Transistor Type MOSFET
Control Channel Type P-Channel
Package SO-8
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 16A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0072Ohm
Power Dissipation (Maximum) PD 2.5W
Drain-Source Capacitance 980pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 9nS
Gate-Threshold Voltage (Maximum) 3V
Total Gate Charge 98nC

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