FDS7064N7 MOSFET Transistor

The FDS7064N7 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDS7064N7 transistor as follows.

FDS7064N7 Transistor Specification

Transistor Code		FDS7064N7
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO-8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	16.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.007Ohm
Power Dissipation (Maximum)	PD	3W
Drain-Source Capacitance		522pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		13nS
Gate-Threshold Voltage (Maximum)		2V

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