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FDS6975 MOSFET Transistor

The FDS6975 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDS6975 transistor as follows.

Circuit diagram symbol of the FDS6975 transistor

FDS6975 Transistor Specification

Transistor Code FDS6975
Transistor Type MOSFET
Control Channel Type P-Channel
Package SO8
Drain-Source Voltage (Maximum) VDS 30V
Drain Current (Maximum) ID 6A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.032Ohm
Power Dissipation (Maximum) PD 2W
Operating Junction Temperature (Maximum) 150°C
Total Gate Charge 14.5nC

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