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FDS6900AS MOSFET Transistor

The FDS6900AS is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDS6900AS transistor as follows.

Circuit diagram symbol of the FDS6900AS transistor

FDS6900AS Transistor Specification

Transistor Code FDS6900AS
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOIC
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 6.9A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.027Ohm
Power Dissipation (Maximum) PD 2W
Operating Junction Temperature (Maximum) 150°C
Total Gate Charge 11nC

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