FDS6688S MOSFET Transistor

The FDS6688S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDS6688S transistor as follows.

FDS6688S Transistor Specification

Transistor Code		FDS6688S
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO-8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	16A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.006Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		890pF
Operating Junction Temperature (Maximum)		125°C
Rise Time		12nS
Gate-Threshold Voltage (Maximum)		3V

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