FDS6688 MOSFET Transistor

The FDS6688 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDS6688 transistor as follows.

FDS6688 Transistor Specification

Transistor Code		FDS6688
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO-8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	16A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.006Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		931pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		11nS
Gate-Threshold Voltage (Maximum)		3V

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