FDS6675A MOSFET Transistor

The FDS6675A is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDS6675A transistor as follows.

FDS6675A Transistor Specification

Transistor Code		FDS6675A
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SO-8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	11A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.013Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		610pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		12nS
Gate-Threshold Voltage (Maximum)		3V

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